MOSFET

TDM3508

TDM3508

N沟道MOSFET · TO252封装
封装TO252
BV (V)30
VGS (±V)20
ID TA=25°C (A)17
ID TC=25°C (A)68
VTH min. (V)1.4
VTH typ. (V)1.7
VTH max. (V)2.5
RDS(on) 10V max. (mΩ)7.5
RDS(on) 4.5V max. (mΩ)12
Ciss (pF)780
Coss (pF)510
Crss (pF)39
Qg 4.5V max. (nC)5.8