MOSFET

TDM3580

TDM3580

N沟道MOSFET · DFN56封装
封装DFN56
BV (V)40
VGS (±V)20
ID TA=25°C (A)25.3
ID TC=25°C (A)100
VTH min. (V)1.3
VTH typ. (V)1.7
VTH max. (V)2.5
RDS(on) 10V max. (mΩ)1.4
RDS(on) 4.5V max. (mΩ)2
Ciss (pF)4945
Coss (pF)1280
Crss (pF)165
Qg 10V max. (nC)78