MOSFET

TDM3432

TDM3432

N沟道MOSFET · TO263封装
封装TO263
BV (V)40
VGS (±V)20
ID TA=25°C (A)25
ID TC=25°C (A)100
VTH min. (V)1.4
VTH typ. (V)1.7
VTH max. (V)2.5
RDS(on) 10V max. (mΩ)3.4
RDS(on) 4.5V max. (mΩ)4.1
Ciss (pF)2650
Coss (pF)750
Crss (pF)88
Qg 10V max. (nC)39
Qg 4.5V max. (nC)17